gan wideband transistor 48 v, 45 w dc - 2.5 ghz rev. v1 NPT2021 1 1 1 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support * restrictions on hazardous substances, european union directive 2011/65/eu. ordering information part number package NPT2021 bulk quantity NPT2021 - smbppr sample board features ? gan on si hemt d - mode transistor ? suitable for linear and saturated applications ? tunable from dc - 2.5 ghz ? 48 v operation ? 16.5 db gain at 2.5 ghz ? 55 % drain efficiency at 2.5 ghz ? 100 % rf tested ? to - 272 package ? rohs* compliant and 260c reflow compatible description the NPT2021 gan hemt is a wideband transistor optimized for dc - 2.5 ghz operation. this device supports cw, pulsed, and linear operation with output power levels to 45 w in an industry standard plastic package with bolt down flange . the NPT2021 is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ism applications and vhf/ uhf/l/s - band radar. built using the sigantic? process - a proprietary gan - on - silicon technology. pin configuration functional schematic pin no. pin name function 1 rf in / v g rf input / gate 2 rf out / v d rf output / drain 3 pad 1 ground / source 1. the exposed pad centered on the package bottom must be connected to rf and dc ground. this path must also provide a low thermal resistance heat path. 1 3 2
gan wideband transistor 48 v, 45 w dc - 2.5 ghz rev. v1 NPT2021 2 2 2 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support rf electrical specifications: t c = 25 ? ds = 48 v, i dq = 350 ma parameter test conditions symbol min. typ. max. units small signal gain cw, 2.5 ghz g ss - 14.2 - db saturated output power cw, 2.5 ghz p sat - 47.5 - dbm drain efficiency at saturation cw, 2.5 ghz ? sat - 65 - % power gain 2.5 ghz, p out = 45 w g p 12 12.8 - db drain efficiency 2.5 ghz, p out = 45 w ? 45 50 - % ruggedness: output mismatch all phase angles ? vswr = 15 :1, no device damage dc electrical characteristics: t c = 25 ? parameter test conditions symbol min. typ. max. units drain - source leakage current v gs = - 8 v, v ds = 160 v i dlk - - 14 ma gate - source leakage current v gs = - 8 v, v ds = 0 v i glk - - 7 ma gate threshold voltage v ds = 48 v, i d = 14 ma v t - 2.5 - 1.8 - 0.5 v gate quiescent voltage v ds = 48 v, i d = 350 ma v gsq - 2.1 - 1.5 - 0.3 v on resistance v ds = 2 v, i d = 105 ma r on - 0.34 - ? saturated drain current v ds = 7 v pulsed, pulse width 300 s i d(sat) - 8.2 - a
gan wideband transistor 48 v, 45 w dc - 2.5 ghz rev. v1 NPT2021 3 3 3 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2. exceeding any one or combination of these limits may cause permanent damage to this device. 3. macom does not recommend sustained operation near these survivability limits. 4. operating at nominal conditions with t j 200c will ensure mttf > 1 x 10 6 hours. parameter absolute maximum drain source voltage, v ds 160 v gate source voltage, v gs - 10 to 3 v gate current, i g 24 ma junction temperature, t j + 200 c operating temperature - 4 0 c to +85 c storage temperature - 65 c to +150c 5. junction temperature (t j ) measured using ir microscopy. case temperature measured using thermocouple embedded in heat - sink. parameter test conditions symbol typical units thermal resistance v ds = 48 v, t j = 200c r ? jc 1.60 c/w thermal characteristics 5 handling procedures please observe the following precautions to avoid damage: static sensitivity gallium nitride circuits are sensitive to electrostatic discharge (esd) and can be damaged by static electricity. proper esd control techniques should be used when handling these hbm class 1b devices. absolute maximum ratings 2,3,4
gan wideband transistor 48 v, 45 w dc - 2.5 ghz rev. v1 NPT2021 4 4 4 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support frequency (mhz) z s ( ? z l ( ? p sat (w) g ss (db) drain efficiency @ p sat (%) 900 1.1 + j0.7 7.3 + j5.5 74 24 68 2000 1.4 - j6.1 2.9 + j2.4 65 17 68 2500 1.5 - j7.6 2.3 + j0.6 64 14 65 load - pull performance: v ds = 48 v, i dq = 350 ma, t c = 25c reference plane at device leads, cw drain efficiency and output power tradeoff impedance gain vs. output power drain efficiency vs. output power impedance reference z s and z l vs. frequency z s z l 12 14 16 18 20 22 24 25 30 35 40 45 50 900 mhz 2000 mhz 2500 mhz gain (db) output power (dbm) 0 10 20 30 40 50 60 70 25 30 35 40 45 50 900 mhz 2000 mhz 2500 mhz drain efficiency (%) output power (dbm)
gan wideband transistor 48 v, 45 w dc - 2.5 ghz rev. v1 NPT2021 5 5 5 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support parts measured on evaluation board (30 - mil thick ro4350). the pcbs electrical and thermal ground is provided using a standard - plated densely packed via hole array (see recommended via pattern). matching is provided using a combination of lumped elements and transmission lines as shown in the simplified schematic above. recommended tuning solution component placement, transmission lines, and details are shown on the next page. evaluation board and recommended tuning solution 2.5 ghz narrowband circuit description turning the device on 1. set v gs to the pinch - off (v p ), typically - 5 v. 2. turn on v ds to nominal voltage (48 v). 3. increase v gs until the i ds current is reached. 4. apply rf power to desired level. turning the device off 1. turn the rf power off. 2. decrease v gs down to v p. 3. decrease v ds down to 0 v. 4. turn off v gs . bias sequencing c 14 3 . 0 pf c 4 1000 pf c 3 0 . 01 m c 2 0 . 1 m c 1 1 . 0 m v gs v ds c 16 0 . 5 pf c 15 2 . 4 pf rf out npt 2021 c 5 1 . 0 m m m rf in c 9 10 pf c 11 18 pf c 12 18 pf r 1 24 . 9 ? l 1 22 nh c 10 15 pf r 2 0 ?
gan wideband transistor 48 v, 45 w dc - 2.5 ghz rev. v1 NPT2021 6 6 6 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support reference value tolerance manufacturer part number c1, c5 1.0 f 10 % avx 1210c105kat2a c2, c6 0.1 f 10 % kemet c1206c104k1ractu c3, c7 0.01 f 10 % avx 12061c103kat2a c4, c8 1000 pf 10 % kemet c0805c102k1ractu c9 10 pf 5 % atc atc800a100j c10, c11 18 pf 10 % atc atc800b180k c12 3.6 pf 0.1 pf murata gqm22m5c2h3r6bb01 c13 1.5 pf 0.1 pf murata gqm22m5c2h1r5bb01 c14, c15 2.4 pf 0.1 pf atc atc800b2r4b l1, l2 22 nh 5% coilcraft 0807sq - 22n_lb r1 24.9 ? 1 % panasonic erj - sidf49r9u - nd pcb rogers ro4350, ? r = 3.5, 30 mil evaluation board and recommended tuning solution 2.5 ghz narrowband circuit parts list
gan wideband transistor 48 v, 45 w dc - 2.5 ghz rev. v1 NPT2021 7 7 7 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support typical performance as measured in the 2.5 ghz evaluation board: cw, v ds = 48 v, i dq = 350 ma (unless noted) gain vs. output power over temperature drain efficiency vs. output power over temperature quiescent v gs vs. temperature 0 10 20 30 40 50 60 70 25 30 35 40 45 50 +25c -40c +85c drain efficiency (%) output power (dbm) -1.6 -1.5 -1.4 -1.3 -1.2 -1.1 -50 -25 0 25 50 75 100 175 ma 350 ma 525 ma v gsq (v) temperature (c) 11 12 13 14 15 16 25 30 35 40 45 50 +25c -40c +85c gain (db) output power (dbm)
gan wideband transistor 48 v, 45 w dc - 2.5 ghz rev. v1 NPT2021 8 8 8 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support 2 - tone imd vs. output power 2 - tone imd3 vs. output power vs. quiescent current 2 - tone gain vs. output power vs. quiescent current typical 2 - tone performance as measured in the 2.5 ghz evaluation board: 1 mhz tone spacing, v ds = 48 v, i dq = 350 ma, t c = 25c (unless noted) -55 -50 -45 -40 -35 -30 -25 -20 -15 1 10 100 -imd3 +imd3 -imd5 +imd5 -imd7 +imd7 imd (dbc) p out (w-pep) 11.5 12 12.5 13 13.5 14 14.5 15 15.5 1 10 100 250ma 350ma 450ma 550ma 650ma gain (db) p out (w-pep) -50 -45 -40 -35 -30 -25 -20 -15 1 10 100 250ma 350ma 450ma 550ma 650ma imd (dbc) p out (w-pep)
gan wideband transistor 48 v, 45 w dc - 2.5 ghz rev. v1 NPT2021 9 9 9 m/a - com technology solutions inc. (macom) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. visit www.macom.com for additional data sheets and product information. for further information and support please visit: https://www.macom.com/support to - 272 - 2 plastic package ? ? meets jedec moisture sensitivity level 3 requirements. plating is matte sn . all dimensions shown as inches [millimeters].
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